unisonic technologies co., ltd UT2312 power mosfet www.unisonic.com.tw 1 of 3 copyright ? 2009 unisonic technologies co., ltd qw-r502-205.d 20v n-channel enhancement mode mosfet ? description the UT2312 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with low gate voltages. this device is suitable fo r use as a load switch or in pwm applications. ? features * r ds(on) = 33 m ? @ v gs = 4.5 v * r ds(on) = 40 m ? @ v gs = 2.5 v * advanced trench process technology * excellent thermal and electrical capabilities * high density cell design for ultra low on-resistance ? symbol 2.gate 1.source 3.drain ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing UT2312l-ae3-r UT2312g-ae3-r sot-23 s g d tape reel ? marking 23n l: lead free g: halogen free www.datasheet.net/ datasheet pdf - http://www..co.kr/
UT2312 power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-205.d ? absolute maximum ratings (ta =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 20 v gate-source voltage v gss 8 v continuous drain current i d 5 a pulsed drain current i dm 15 a power dissipation (ta =25c) p d 1.25 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol min typ max unit junction to ambient ja 100 c/w ? electrical characteristics (ta =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250 a 20 v zero gate voltage drain current i dss v ds =20 v, v gs =0 v 1.0 a gate?body leakage, forward i gss v gs = 8v, v ds = 0 v 100 na on characteristics gate-threshold voltage v gs(th) v ds =v gs , i d =250 a 0.45 v v gs =4.5v, i d =5.0 a 25 33 m ? static drain?source on?resistance r ds(on) v gs =2.5 v, i d =4.0 a 35 40 m ? on-state drain current i d(on) v ds 10 v, v gs = 4.5 v 15 a forward transconductance g fs v ds = 5v, i d = 5.0 a 20 s dynamic parameters input capacitance c iss 900 pf output capacitance c oss 140 pf reverse transfer capacitance c rss v ds =10v, v gs =0v, f=1.0mhz 100 pf switching parameters total gate charge q g 11 14 nc gate source charge q gs 1.4 nc gate drain charge q gd v ds =10v, v gs =4.5v, i d =3.6a 2.2 nc turn-on delay time t d(on) 15 25 ns turn-on rise time t r 40 60 ns turn-off delay time t d(off) 48 70 ns turn-off fall-time t f v dd =10v, i d =1a, r l =10 ? v gen =4.5v, r g =6 ? 31 45 ns source- drain diode ratings and characteristics drain-source diode forward voltage v sd i s =1.0 a,v gs =0 v 0.75 1.2 v max. diode forward current i s 1.6 a notes: pulse test; pulse width 300 s, duty cycle 2% www.datasheet.net/ datasheet pdf - http://www..co.kr/
UT2312 power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-205.d ? test circuit and waveform utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. www.datasheet.net/ datasheet pdf - http://www..co.kr/
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